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| BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE TO-3 1 2 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V CEO V EBO IC I CM P tot T s tg Tj June 1996 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) TO - 3 T otal Dissipation at T c = 25 o C Storage Temperature Max. O perating Junction Temperature 150 150 Valu e 1500 700 10 8 15 TO - 218 125 150 ISOW ATT218 50 -65 to 150 150 W o o Unit V V V A A -65 to 150 -65 to 150 C C 1/8 BU208D/508D/508DFI THERMAL DATA TO-3 R thj -ca se Thermal Resistance Junction-case Max 1 T O-218 1 ISOW AT T218 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CES I EBO V CE(sat) VCEO(s us) V BE(sat ) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut- off Current (I C = 0) Collector-Emitter Saturation Voltage Collector-Emitter Sustaining Voltage Base-Emitter Saturation Voltage INDUCT IVE LOAD Storage Time Fall Time Diode F orward Voltage Transition Frequency T est Con ditio ns V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 4.5 A I C = 100 m A I C = 4.5 A IB = 2 A IB = 2 A 700 1.3 T j = 125 C o Min . T yp. Max. 1 2 300 1 Unit mA mA mA V V V ts tf VF fT I C = 4.5 A hF E = 2.5 V CC = 140 V LC = 0.9 mH LB = 3 H IF = 4 A I C = 0.1 A V CE = 5 V f = 5 MHz 7 550 2 7 s ns V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area (TO-3) Safe Operating Area (TO-218/ISOWATT218) 2/8 BU208D/508D/508DFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) Switching Time Percentance vs. Case 3/8 BU208D/508D/508DFI Figure 1: Inductive Load Switching Test Circuits 4/8 BU208D/508D/508DFI TO-3 (H) MECHANICAL DATA mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX. DIM. P G A D C U V O N R B P003N 5/8 E BU208D/508D/508DFI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A 6/8 G BU208D/508D/508DFI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.45 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.017 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 7/8 BU208D/508D/508DFI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 8/8 |
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